1. One of the following statement which is true for relative dielectric constant is -
a) It is dimensionless
b) It is not equal to unity for vacuum
c) It’s value for all substances is less than one
d) None
Answer is :- It is dimensionless

2. Pure metals generally have-
a) high conductivity and low temperature coefficient
b) high conductivity and large temperature coefficient
c) low conductivity and zero temperature coefficient
d) low conductivity and high temperature coefficient
Answer is :- high conductivity and large temperature coefficient

3. For small size, high frequency coils, the most common core material is
a) Air
b) Ferrite
c) Powdered ion
d) Steel
Answer is :- Air

4. For an abrupt junction Varactor diode, the dependence of device capacitance (C) on applied reverse bias (V) is given by-
a) C a V1/3
b) C a V-1/3
c) C a V1/2
d) C a V-1/2
Answer is :- C a V-1/3

5. A superconductor is a-
a) A material showing perfect conductivity and Meissner effect below a critical temperature
b) A conductor having zero resistance
c) A perfect conductor with highest dimagnetic susceptibility
d) A perfect conductor which becomes resistive when the current density through it exceeds a critical value
Answer is :-A material showing perfect conductivity and Meissner effect below a critical temperature

6. When a semiconductor based temperature transducer has a temperature coefficient of –2500 mV/0C then this transducer is indeed a-
a) Thermistor
b) Forward biased pn junction diode
c) Reverse biased pn junction diode
d) FET
Answer is :- Forward biased pn junction diode

7. The location of lightning arrestor is -
a) Near the transformer
b) Near the circuit breaker
c) Away from the transformer
d) None
Answer is :- Near the transformer

8. Time constant of an RC circuit increases if the value of the resistance is -
a) Increased
b) Decreased
c) Neither a nor b
d) Both a and b
Answer is :- Increased

9. Intrinsic semiconductors are those which -
a) Are available locally
b) Are made of the semiconductor material in its purest from
c) Have more electrons than holes
d) Have zero energy gaps
Answer is :- Are made of the semiconductor material in its purest from

10. The primary control on drain current in a JFET is exerted by -
a) Channel resistance
b) Size of depletion regions
c) Voltage drop across channel
d) Gate reverse bias
Answer is :- Gate reverse bias

11. The electrical conductivity of metals which is expressed in ohm-1 m-1 is of the order of -
a) 1010
b) 105
c) 10-4
d) 10-6
Answer is :- 105

12. When biased correctly, a zener diode –
a) acts as a fixed resistance
b) has a constant voltage across it
c) has a constant current passing through it
d) never overheats
Answer is :- has a constant voltage across it

13. The current amplification factor adc is given by –
a) IC/IE
b) IC/IB
c) IB/IC
d) IB/IC
Answer is :- IC/IE

14. Compared to bipolars, FETs have-
a) high input impedance
b) low input impedance
c) same input impedance
d) none
Answer is :- high input impedance

15. The source-drain channel of JFET is -
a) ohmic
b) bilateral
c) unilateral
d) both a and b
Answer is :- both a and b

16. diac is equivalent to a -
a) Pair of SCRs
b) Pair of four layer SCRs
c) Diode and two resistors
d) Triac width
Answer is :- Pair of four layer SCRs

17. When a sample of N type semiconductor has electron density of 6.25 ´ 1011 /cm3 at 300K and if the intrinsic concentration of carriers in this sample is 2.5 ´ 1013/cm3 then the hole density will be –
a) 106/cm3
b) 103/ cm3
c) 1010/ cm3
d) 1012/ cm3
Answer is :- 103/ cm3

18. The statement ‘In any network of linear impedances, the current flowing at any point is equal to the algebraic sum of the currents caused to flow at that point by each of the sources of emf taken separately with all other emf’s reduced to zero’ represents -
a) Kirchhoff’s law
b) Norton’s theorem
c) Thevenin’s theorem
d) Superposition theorem
Answer is :- Superposition theorem

19. One of the following modes which has the characteristics of attenuation becoming less as the frequency is increased and is attractive at icrowave frequencies of circular cylindrical wave guides is –
a) TE1 mode
b) TM01 mode
c) TE01 mode
d) Higher order mode
Answer is :- TE01 mode

20. A two-port network is symmetrical if –
a) z11z22 – z12z21 = 1
b) h11h22 – h12h21 = 1
c) AD – BC = 1
d) y11y22 – y12y21 = 1
Answer is :-AD – BC = 1

21. For transmission line load matching over a range of frequencies, it is best to use a-
a) balun
b) broad band directional coupler
c) double stub
d) single stub of adjustable position
Answer is :- double stub

22. The poles and zeros of a driving point function of a network are simple and interlace on the negative real axis with a pole closest to the origin. It can be realised -
a) by an LC network
b) as an RC driving point impedance
c) as an RC driving point admittance
d) only by an RLC network
Answer is:- only by an RLC network

23. Poles and zeros of a driving point function of a network are simple and interlace on the jw axis. The network consists of elements –
a) R and C
b) L and C
c) R and L
d) R, L and C
Answer is :- L and C

24. For a two port reciprocal network, the output open circuit voltage divided by the input current is equal to –
a) B
b) Z12
c) —
d) h12
Answer is :- Z12

25. In a short electric doublet the radiation properties are so that-
a) The induction field diminishes as the square root of the distance and is only appreciable in the vicinity of the conductor.
b) In the radiation, magnetic field is minimum when the current is maximum.
c) The radiation resistance of a short doublet antenna is extremely high.
d) Mean rate of power through a unit area of spherical sphere surrounding this doublet is proportional to the square of the elemental length, other factors remaining constant.
Answer is :-Mean rate of power through a unit area of spherical sphere surrounding this doublet is proportional to the square of the elemental length, other factors remaining constant.

26. The frequency modulated (FM) radio frequency range is nearly -
a) 250 –300 MHz
b) 150 – 200 MHz
c) 90 – 105 MHz
d) 30-70 MHz
Answer is :-90 – 105 MHz

Engineering Stream Paper – I
1. Materials and components

Structure and properties of Electronic Engineering materials, Conductors, Semiconductors and Insulators, Magnetic, Ferroelectric, Piezoelectric, Ceramic, Optical and Superconducting materials. Passive components and characteristics, Resistors, Capacitors and Inductors; Ferrites, Quartz crystal, Ceramic resonators, Electromagnetic and Electromechanical components.

2. Physical Electronics, Electron Devices and ICs
Electrons and holes in semiconductors, Carrier Statistics, Mechanics of current flow in a semi-conductor, Hall effect; Junction theory; Different types of diodes and their characteristics; Bipolar Junction transistor; Field effect transistors; Power switching devices like SCRs, CTOs, power MOSFETs; Basics of ICs-bipolar, MOS and CMOS types; Basics of Opto Electronics.

3. Network theory
Network analysis techniques: Network theorem, transcient and steady state sinusoidal response, Transmission criteria: delay and rise time Elmore’s and other definition, effect of cascading. Elements of network synthesis.

4. Electromagnetic Theory
Transmission lines: basic theory, standing waves, matching applications, microstrip lines; Basics of waveguides and resonators; Elements of antenna theory.

5. Electronic Measurements and instrumentation
Basic concepts, standards and error analysis; Measurements of basic electrical quantities and parameters; Electronic measuring instruments and their principles of working: analog and digital, comparison, characteristics, applications. Transducers; Electronic measurements of non-electrical quantities like temperature, pressure, humidity etc. Basics of telemetry for industrial use.

6. Power Electronics
Power Semiconductor devices, Thyristor, Power transistor, MOSFETs, Characteristics and operation. AC to DC convertors; 1-Phase and 3-phase DC to DC Convertors. AC regulators. Thyristor controlled reactors, switched capacitor networks. Inverters: Single-phase and 3-phase. Pulse width modulation. Sinusoidal modulation with uniform sampling. Switched mode power supplies.

Engineering Stream Paper – II

1. Analog Electronic Circuits
Transistor biasing and stabilization, Small Signal analysis. Power amplifiers. Frequency response, Wide band techniques, Feedback amplifiers. Tuned amplifiers. Oscillators. Rectifiers and power supplies. Operational Amplifier, other linear integrated circuits and applications. Pulse shaping circuits and waveform generators.

2. Digital Electronic Circuits
Transistor as a switching element; Boolean algebra, simplification of Boolean functions, Karnaugh Map and applications; IC Logic gates and their characteristics; IC logic families: DTL, TTL, ECL, NMOS, PMOS and CMOS gates and their comparison; Combinational logic circuits; Half adder, full adder; Digital Compartor; Multiplexer Demultiplexer; ROM and their applications. Flip-flops, R-S, J-K, D and T flip-flops; Different types of counters and registers; waveform generators. A/D and D/A convertors. Semiconductor memories.

3. Control Systems
Transient and steady state response of control systems; Effect of feedback on stability and sensitivity, Root locus techniques; Frequency response analysis. Concepts of gain and phase margins; Constant-M and Constant-N Nichol’s Chart; Approximation of transient response from Constant-N Nichol’s Chart; Approximation of transient response from closed loop frequency response; Design of Control Systems, Compensators; Industrial controllers.

4. Communication systems
Basic information theory: Modulation and detection in analogue and digital systems; Sampling and data reconstruction. Quantization & Coding; Time division and frequency division multiplexing; Equalisation; Optical Communication: in free space & fibre optic; Propagation of signals at HF, VHF, UHF and microwave frequency; Satellite communication.

5. Microwave Engineering
Microwave Tubes and solid state devices, Microwave generation and amplifiers, Waveguides and other Microwave Components and Circuits, Microstrip circuits, Microwave antennas, Microwave Measurements, MASERS LASERS; Microwave Propogation. Microwave Communication Systems-terrestrial and satellite based.

6. Computer Engineering
Number Systems; Data representation; Programming; Elements of a high level programming language PASCAL/C; use of basic data structures; Fundamentals of computer architecture processor design; Control unit design; Memory organization. I/O System Organization. Personal computers and their typical uses.

7. Microprocessors
Microprocessor architecture – Instruction set and simple assembly language programming. Interfacing for memory and I/O. Applications of Microprocessors in Telecommunications and power system.

General Ability Test Paper – III
General ability test:
The candidate’s comprehension and understanding of General English shall be tested through simple exercises. Questions on knowledge of current events and of such matter of everyday observation and experience in their scientific aspects as may be expected of an educated person. Questions will also be included on events and developments in Telecommunications, History of India and Geography. These will be of a nature, which can be answered without special study by an educated person

BSNL JTO EXam For Direct  Recruitment of Junior Telecom Officers, exam has an objective type Examination of 3 hours. it including the following three subjects.

* Engineering Stream Paper – I
* Engineering Stream Paper – II
* General Ability Test Paper – III

Syllabus Overview For JTO Exam

PAPER – I

* Materials and components
* Physical Electronics, Electron Devices and ICs
* Network theory
* Electromagnetic Theory
* Electronic Measurements and instrumentation
* Power Electronics

PAPER-II

* Analog Electronic Circuits
* Digital Electronic Circuits
* Control Systems

PAPER-III

* General ability test

For Detail Information About the study knowledge click Here.
Important Notification From BSNL

* Date of Examination : 21.06.2009
* Qualification : B. E/B.Tech as on 31.12.2009
* Engineering Disciplines eligible are: Telecommunication, Electronics, Radio ,Computer ,Electrical ,Information Technology
* Examination Fee : Rs 750 [DD] in favor of Senior Accounts Officer/Accounts Officer payable at the respective stations NO FEE for SC/ST/PH
* Last Date for Receiving Applications :06.04.2009
* Candidates appearing in the final year degree examination can apply?: Yes

Sample Questions for Practice for BSNL JTO Exam

1. Reactive current through the inductive load produces-
a) Magnetic field
b) Electric field
c) Super magnetic field
d) None

2. When a piece of copper and another of germanium are cooled from room temperature to 800 K then the resistance of -
a) each of them increases
b) each of them decreases
c) copper increases and germanium decreases
d) copper decreases and germanium increases

3. A capacitance transducer has two plates of area 5 cm2 each separated by an air gap of 2mm. Displacement sensitivity in pF /cm due to gap change would be -
a) 11.1
b) 44.2
c) 52.3
d) 66.3

4. The critical angle in degrees, for an electromagnetic wave passing from Quartz (m = m0, Î=4Îo) into air is-
a) 15
b)30
c)45
d)90

5. When an RC driving point impedance function has zeros at s= -2 and s=-5 then the admissible poles for the function would be –
a) s = 0; s = -6
b) s = -1; s = -3
c) s = 0; s = -1
d) s = -3; s = -4

6. A capacitor used for power factor correction in single- phase circuit decreases –
a) the power factor
b) the line current
c) Both the line current and the power factor
d) the line current and increases power factor

7. The unit of inductance is –
a) ohm
b) inductive reactance
c) inducta
d) Henry

8. Which type of by-pass capacitor works best at high frequencies –
a) electrolytic
b) mica
c) ceramic
d) plexiglass

9. The usual value of the surge impedance of a telephone line is –
a) 600 W
b) 500 W
c) 75 W
d) none

10. Telemetering is a method of –
a) counting pulses, sent over long distances
b) transmitting pictures from one place to another
c) transmitting information concerning a process over a distance
d) None